Electronics Weekly

Intel plans combined SiGe/CMOS 90nm process

Intel has unveiled an ambitious plan to add silicon germanium (SiGe) transistors and mixed-signal communications circuitry to its up-coming 90nm CMOS process. It marks the first move by the ...
Electronics Weekly

Philips proves 90nm CMOS

Philips has proven the first silicon from its low-leakage 90nm CMOS process at the Crolles2 wafer fab near Grenoble, France, and at TSMC’s fab in Taiwan. The firm said the process, which has been ...
EDN

TSMC moves ahead with plan to standardize CMOS process

Taiwan Semiconductor Manufacturing Co. Ltd. gained ground this week in its effort to standardize the industry's advanced process technologies, disclosing a 90nm CMOS process developed with Philips ...
Design-Reuse

Texas Instruments' 6.25 Gbps SerDes Technology Now Available in 90nm Process

Support for Over 200 Channels with the Industry's Lowest Power DALLAS (April 5, 2004) - Extending its range of leading serializer/deserializer (SerDes) offerings, Texas Instruments Incorporated (NYSE: ...
Electronic Design

Philips Ramps 90-nm CMOS Products Into High-Volume

Philips ramped up three key 90-nm CMOS products into volume production at the Crolles2 Alliance wafer fab in Crolles, France. The products are baseband chips for highly integrated system-inapackage ...
Design-Reuse

Bandgap Reference (BGR) Circuit Design and Transient Analysis in 90nm VLSI Technology

The Bandgap Reference (BGR) circuit is a key element in Very-large-scale Integration (VLSI) designs, providing a stable reference voltage that is crucial for the performance and reliability of analog ...