Digital Photography Review on MSN

NASA once rejected the sensor technology that is now in every smartphone camera

Image: Tech Transfer HQ CMOS sensors are now so ordinary that it's easy to forget how transformative they were. They're used ...
News Medical

Using CMOS Devices to Capture Cell Images

Complementary Metal Oxide Semiconductor (CMOS) is a type of circuit known to be cost-effective and efficient. These circuits are found in many day-to-day items, such as batteries and the image sensors ...
EDN

Remote 4-bit CMOS Device with GPOs

The PCA9570 is a CMOS device that provides 4 bits of General Purpose parallel Output (GPO) expansion in low voltage processor and handheld battery powered mobile applications. It operates at 1 MHz I²C ...
Semiconductor Engineering

Quantum Computers And CMOS Semiconductors: A Review And Future Predictions

With the advent of quantum computing, the need for peripheral fault-tolerant logic control circuitry has reached new heights. In classical computation, the unit of information is a “1” or “0”. In ...
Electronic Design

Twisted Bonding Technology Speeds Up CMOS Devices

Improved bonding technology helped Toshiba and IBM Corp. develop a higher performance CMOS FET. CMOS has traditionally played a central role in semiconductor design, a position now under threat as ...
Business Wire

ams OSRAM Makes UV-A/B/C Radiation Monitoring More Affordable With Launch of New High-Sensitivity Three-Channel CMOS Sensor

PREMSTAETTEN, Austria--(BUSINESS WIRE)--ams OSRAM (SIX: AMS), a global leader in optical solutions, has introduced a three-channel UV-A/B/C sensor, the AS7331, which brings UV dosage and exposure ...
EDN

CMOS vs. CCD: The Battle Rages On

The image sensor market is booming during a period of unprecedented change. Image sensors, semiconductor devices that convert photons into electrons for display or storage, are being used in more and ...
Electronic Design

Imec Demonstrates III-V Compound FinFET Devices

November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...