Murata has announced a new generation silicon capacitor process which builds devices less than 40µm thick and up to 1.3µF/mm2. Made using semiconductor lithography techniques, the capacitors are ...

TOKYO — Toshiba Corp. said it is leveraging its deep-trench-capacitor DRAM structure, which it has championed as a process driver since the 0.25-micron generation, to migrate its system-on-chip ...

But if you eliminate the capacitor, where is the charge that represents the data bit stored? That's the magic of SOI. The active circuit layer is isolated from the substrate, so there's a capacitive ...

The DRAM cache trap—why a simple power outage can instantly corrupt your consumer SSD ...

Leakage current has been a leading cause of device failure in DRAM design, starting with the 20nm technology node. Problems with leakage current in DRAM design can lead to reliability issues, even ...

Recently, a customer came to the Precision Amplifier Forum here in the TI E2E Community with some confusing circuit behavior. His circuit used an op amp to amplify the output of a microphone at very ...