Semiconductor Engineering

Suitability of FeFET-Based CAM Cells For Storage-Class Memory, Under Junction Temperature Variations

A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was ...
Electronic Design

Low-Latency NAND Flash as Storage Class Memory (SCM): Filling the Gap Between DRAM and Storage

This FAQ explores how low-latency NAND flash memory enhances high-performance computing by filling the gap between DRAM and storage, optimizing AI data center architectures, and improving performance ...