The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

Firstly, a brief introduction was given to commonly used two-dimensional materials, including graphene, transition metal dichalcogenides (TMDC), black phosphorus (BP), and hexagonal boron nitride ...

Many applications need to archive data or retain system information after power-down. These tasks fall to nonvolatile memory that must be in-circuit writable at least once, and often many times.

Dr. Simon Min Sze, a semiconductor physics visionary most notable for his contributions to the invention of the world's first floating-gate metal-oxide-semiconductor field-effect transistor (MOSFET), ...