A research team from IBM and the Georgia Institute of Technology has demonstrated the first silicon-germanium transistor able to operate at frequencies above 500 GHz. Though the record performance was ...
Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...
Scientists at Forschungszentrum Jülich have fabricated a new type of transistor from a germanium–tin alloy that has several advantages over conventional switching elements. Charge carriers can move ...
A germanium-based transistor that can be programmed between electron and hole conduction has been demonstrated by a team of scientists from the Nanoelectronic Materials Laboratory and the Centre for ...
At the Forschungszentrum Jülich, a new kind of transistor from germanium–tin alloy has been fabricated by scientists. The alloy comes with numerous benefits over traditional switching elements. The ...
Silicon is at the heart of nearly all semiconductors. It's a well-understood material that has stood the test of time since the late 1960s, when it first displaced germanium as the material of choice ...
(Nanowerk News) Over the past 70 years, the number of transistors on a chip has doubled approximately every two years – according to Moore’s Law, which is still valid today. The circuits have become ...
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