A technical paper titled “CFET Beyond 3 nm: SRAM Reliability under Design-Time and Run-Time Variability” was published by researchers at TU Munich and IIT Kanpur. Find the technical paper here. May ...

Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management. The fundamental ...

Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine metal ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

What are Organic Field-Effect Transistors? Organic field-effect transistors (OFETs) are a type of transistor that uses an organic semiconductor material as the active layer. Unlike conventional ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such ...

Many things about diamonds seem eternal, including the many engineering problems related to making them work as a silicon ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...

A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

(Nanowerk News) A revolution in technology is on the horizon, and it’s poised to change the devices that we use. Under the distinguished leadership of Professor LEE Young Hee, a team of visionary ...