Gallium nitride (GaN) RF transistors have traditionally been depletion mode, making them difficult to bias. High frequency enhancement mode transistors, such as the EPC8000 series eGaN FETs from EPC, ...

This article presents the challenges in designing RF power amplifier efficiency. It briefly describes the use of different amplifiers and techniques to create an effective result. This article ...

Unlike power switching FETs, RF FETs are designed to work best in the linear region of operation to maximize power gain and minimize distortion, whereas power switching devices are optimized for ...

With 14 envelope-tracking-enabled handsets now on the market, and more sets to follow in the coming years, envelope tracking (ET) has been firmly accepted as the industry standard for the architecture ...