The HFA3128 is an ultra high frequency transistor array that is fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated ...
Jun'ya Tsutsumi (Researcher), Tatsuo Hasegawa (Principal Research Manager), and others of the Flexible Materials Base Team, the Flexible Electronics Research Center (Director: Toshihide Kamata), the ...
PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain transistors, where all ...
This application note presents the ISL73096RH/ISL73127RH/ISL73128RH transistor arrays and focuses on designing RF amplifiers employing these featured transistor ...
(Nanowerk News) Professor Soon-Yong Kwon in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, in collaboration ...
A research team led by Professor Taesung Kim from the School of Mechanical Engineering at Sungkyunkwan University has developed hafnium oxide-based ferroelectric transistor arrays and successfully ...
A false-colored scanning microscope image of a 10-FET transistor array. Red: Silicone elastomer; Green: PI; Light blue: SU8; Yellow: Gold; Grey: Silicon. Credit: Gu et al. A false-colored scanning ...
(Nanowerk Spotlight) For over fifty years, the relentless miniaturization of silicon transistors has upheld Moore’s Law, delivering exponential leaps in computing power. However, this development ...
Back in 2018 we reported on the first silicon integrated circuit to be produced in a homemade chip fab. It was the work of [Sam Zeloof], and his Z1 chip was a modest six-transistor amplifier. Not one ...
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